Ultra low k dielectrics for ULSI interconnects

Description:

Keywords: ULSI, interconnect, dielectric, low-k, nanocomposite

 

Applications: ULSI interconnects, interlayer dielectrics

 

Problem:

 

The modern ULSI technology requires interconnects with less and less dielectric constant. Though modern dielectrics demonstrate k = 2.5 the materials with k < 2 are required by the industry

 

Technology:

 

We developed a new ultra low-k dielectric material, which is a combination of inorganic nanoparticles with voids inside and the highly fluorinated polymers. This combination allowed us to obtain materials with the k (dielectric constant) < 2. The technology is spin-on and compatible with modern ULSI manufacture technology.  Also our material possesses mechanical and thermal durability and low copper diffusion rate as well as high values of breakdown voltage and low leakage current. If implemented, it will allow the next step in the miniaturization of ULSI and is intended for the 12 nm and less integration.

 

Advantages:

 

Ultra low k

 

Easy deposition – spin on

 

Non-expensive materials

 

High mechanical and thermal stability

 

Low tan delta

 

Low copper diffusion rate

 

Inventors/Authors: 

 

Prof. Mukhamed Keshtov

Dr. Dmitri Godovsky

 

Intellectual Property:

 

PCT patent application: PCT/RU2013/001172

 

Publications:

 

1. Mukhamed Keshtov, Ernest Said-Galiev, Vitaliy Kochurov and Alexei Khokhlov New polyimide-polyoxometalate nanocomposite materials with nanoporous structure and ultra-low dielectric constant, formed in supercritical carbon dioxide AIP Conf. Proc. 1459, 277 (2012); http://dx.doi.org/10.1063/1.4738468

Patent Information:
Category(s):
Electronics
For Information, Contact:
Sergey Ulyakhin
Licensing and Technology Transfer Manager
The Skolkovo Institute of Science and Technology
s.ulyakhin@skoltech.ru
Inventors:
Dmitry Godovsky
Makhmud Keshtov
Sergey Kuklin
Vitaly Kochurov
Keywords:
Interconnects
Low-K
Nanocomposite
ULSI
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