Description:
Keywords: ULSI, interconnect, dielectric, low-k, nanocomposite
Applications: ULSI interconnects, interlayer dielectrics
Problem:
The modern ULSI technology requires interconnects with less and less dielectric constant. Though modern dielectrics demonstrate k = 2.5 the materials with k < 2 are required by the industry
Technology:
We developed a new ultra low-k dielectric material, which is a combination of inorganic nanoparticles with voids inside and the highly fluorinated polymers. This combination allowed us to obtain materials with the k (dielectric constant) < 2. The technology is spin-on and compatible with modern ULSI manufacture technology. Also our material possesses mechanical and thermal durability and low copper diffusion rate as well as high values of breakdown voltage and low leakage current. If implemented, it will allow the next step in the miniaturization of ULSI and is intended for the 12 nm and less integration.
Advantages:
Ultra low k
Easy deposition – spin on
Non-expensive materials
High mechanical and thermal stability
Low tan delta
Low copper diffusion rate
Inventors/Authors:
Prof. Mukhamed Keshtov
Dr. Dmitri Godovsky
Intellectual Property:
PCT patent application: PCT/RU2013/001172
Publications:
1. Mukhamed Keshtov, Ernest Said-Galiev, Vitaliy Kochurov and Alexei Khokhlov New polyimide-polyoxometalate nanocomposite materials with nanoporous structure and ultra-low dielectric constant, formed in supercritical carbon dioxide AIP Conf. Proc. 1459, 277 (2012); http://dx.doi.org/10.1063/1.4738468